Y. Kuo, invited paper.,
"Nonvolatile Memories for Nano and Giga Electronics,"
2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Hong Kong, China, June 26 - July 1, 2011.
Memorydevices are critical elements in ULSIC. It is also
desirableto include memory functions in a-Si:H TFTs for new
andnovel applications. In this paper, the author reviews and
discussesrecent developments on two types of nonvolatile memories
in hislaboratory, i.e., the nanocrystals embedded high-k MOS
capacitor and the floating-gate a-Si:H TFT. For the former, the
structure, device performance,and reliability are examined. For the
latter, charge trappingand detrapping mechanisms and memory
functions are investigated. Challenges ofthese devices toward nano
and giga electronics are analyzed.
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