Citation:

Y. Kuo, invited paper., "Nonvolatile Memories for Nano and Giga Electronics," 2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Hong Kong, China, June 26 - July 1, 2011.

Abstract:

Memorydevices are critical elements in ULSIC. It is also desirableto include memory functions in a-Si:H TFTs for new andnovel applications. In this paper, the author reviews and discussesrecent developments on two types of nonvolatile memories in hislaboratory, i.e., the nanocrystals embedded high-k MOS capacitor and the floating-gate a-Si:H TFT. For the former, the structure, device performance,and reliability are examined. For the latter, charge trappingand detrapping mechanisms and memory functions are investigated. Challenges ofthese devices toward nano and giga electronics are analyzed.

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