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Citation:

Y. Kuo, invited paper, "Mechanism and Performance of Floating-Gate a-Si:H TFT Nonvolatile Memory Devices," 10th TFT Symposium of Electrochemical Society National Conference, Las Vegas, NV, October 13, 2010.

Abstract:

The floating-gate a-Si:H thin film transistor provides the memory function that is not available with the conventional a-Si:H thin film transistor. Mechanisms of charge trapping and detrapping in the floating-gate a-Si:H TFT are discussed based on the transfer characteristics curve. Influences of two critical factors, i.e., the starting gate voltage of the forward transfer characteristics and the channel-contact layer thickness, on the memory  window were investigated. The amount of electrons trapped to the gate dielectric layer is  dependent on the maximum gate voltage at the end of the forward curve but independent of  the original amount of holes trapped. The memory window can be well defined when no excessive holes are trapped to the gate dielectric layer in the forward curve.

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Associated Project(s):

  • SHIELD (Smuggled HEU Interdiction through Enhanced anaLysis and Detection): A Framework for Developing Novel Detection Systems Focused on Interdicting Shielded HEU

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