"Hysteresis of Transfer Characteristics of Floating-Gate a-Si:H Thin Film Transistor Nonvolatile Memories,"
Electrochemical and Solid-State Letters
, 13(12), H460-H463 (2010).
mechanism controlling the memory function of the floating-gate
amorphous silicon thin film transistor, i.e., the hysteresis
behavior of the transfer characteristics, has been identified. The
magnitudes of the forward and backward gate voltages determine the
charge trapping and detrapping processes including the curve of the
transfer characteristics, the hysteresis direction, and the memory
window. The thickness of the channel-contact layer also controls
the charge transport distance and the memory function. The memory
window can be well defined and optimized by avoiding excessive
trapping of holes and enhancing the trap of electrons. © 2010 The
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